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	Characterization of the inhomogeneous barrier distribution in a Pt/(100) β -Ga2O3 Schottky diode via its temperature-dependent electrical properties
	Jian G.; He Q.; Mu W.; Fu B.; Dong H.; Qin Y.; Zhang Y.; Xue H.; 等 更多
刊名	AIP Advances
	2018
卷号	8期号:1
DOI	10.1063/1.5007197
URL标识	查看原文
公开日期	[db:dc_date_available]
内容类型	期刊论文
URI标识	http://www.corc.org.cn/handle/1471x/4581035
专题	山东大学
作者单位	Key Laboratory of Microelectronics Devices and Integration Technology, Institute of Microelectronics, Chinese Academy of Sciences, Beijing,
推荐引用方式 GB/T 7714	Jian G.,He Q.,Mu W.,et al. Characterization of the inhomogeneous barrier distribution in a Pt/(100) β -Ga2O3 Schottky diode via its temperature-dependent electrical properties[J]. AIP Advances,2018,8(1).
APA	Jian G..,He Q..,Mu W..,Fu B..,Dong H..,...&等 更多.(2018).Characterization of the inhomogeneous barrier distribution in a Pt/(100) β -Ga2O3 Schottky diode via its temperature-dependent electrical properties.AIP Advances,8(1).
MLA	Jian G.,et al."Characterization of the inhomogeneous barrier distribution in a Pt/(100) β -Ga2O3 Schottky diode via its temperature-dependent electrical properties".AIP Advances 8.1(2018).

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