| A diode based on a chemically-doped SWCNT | |
| Song Chuan-juan; Yang Jun-ru; Liao Cheng-hao; Liu Xiao-dong; Wang Ying; He Rong; Dong Xu-sheng; Zhong Han-qing; Liu Yi-jian; Zhang L 更多 | |
| 刊名 | NEW CARBON MATERIALS
 |
| 2018 | |
| 卷号 | 33期号:5页码:476-480 |
| 关键词 | SWCNT p-i-n junction diode Locally chemical doping Rectification characteristic |
| DOI | 10.1016/S1872-5805(18)30013-1 |
| URL标识 | 查看原文 |
| 公开日期 | [db:dc_date_available] |
| 内容类型 | 期刊论文 |
| URI标识 | http://www.corc.org.cn/handle/1471x/4579469 |
| 专题 | 山东大学 |
| 作者单位 | 1.Shandong Univ Sci & Technol, Sch Mech & Elect Engn, Qingdao 266590, Peoples R China. 2.[Song Chuan-juan 3.Liao Cheng-ha |
| 推荐引用方式 GB/T 7714 | Song Chuan-juan,Yang Jun-ru,Liao Cheng-hao,et al. A diode based on a chemically-doped SWCNT[J]. NEW CARBON MATERIALS,2018,33(5):476-480. |
| APA | Song Chuan-juan.,Yang Jun-ru.,Liao Cheng-hao.,Liu Xiao-dong.,Wang Ying.,...&Zhang L 更多.(2018).A diode based on a chemically-doped SWCNT.NEW CARBON MATERIALS,33(5),476-480. |
| MLA | Song Chuan-juan,et al."A diode based on a chemically-doped SWCNT".NEW CARBON MATERIALS 33.5(2018):476-480. |
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