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	Improved performance of InSe field-effect transistors by channel encapsulation
	Liang, Guangda; Wang, Yiming; Han, Lin; Yang, Zai-Xing; Xin, Qian; Kudrynskyi, Zakhar R.; Kovalyuk, Zakhar D.; Patane, Amalia; Song, A 更多
刊名	SEMICONDUCTOR SCIENCE AND TECHNOLOGY
	2018
卷号	33期号:6
关键词	InSe 2D semiconductor bias stress PMMA encapsulation
DOI	10.1088/1361-6641/aab62b
URL标识	查看原文
公开日期	[db:dc_date_available]
内容类型	期刊论文
URI标识	http://www.corc.org.cn/handle/1471x/4573199
专题	山东大学
作者单位	Shandong Univ, Ctr Nanoelect, Jinan 250100, Shandong, Peoples R China
推荐引用方式 GB/T 7714	Liang, Guangda,Wang, Yiming,Han, Lin,et al. Improved performance of InSe field-effect transistors by channel encapsulation[J]. SEMICONDUCTOR SCIENCE AND TECHNOLOGY,2018,33(6).
APA	Liang, Guangda.,Wang, Yiming.,Han, Lin.,Yang, Zai-Xing.,Xin, Qian.,...&Song, A 更多.(2018).Improved performance of InSe field-effect transistors by channel encapsulation.SEMICONDUCTOR SCIENCE AND TECHNOLOGY,33(6).
MLA	Liang, Guangda,et al."Improved performance of InSe field-effect transistors by channel encapsulation".SEMICONDUCTOR SCIENCE AND TECHNOLOGY 33.6(2018).

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