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	Flow Field and Temperature Field in GaN-MOCVD Reactor Based on Computational Fluid Dynamics Modeling
	Mei SZ(梅书哲); Wang Q(王权); Hao ML(郝美兰); Xu JK(徐健凯); Xiao HL(肖红领); Feng C(冯春); Jiang LJ(姜丽娟); Wang XL(王晓亮); Liu FQ(刘峰奇); Xu XG(徐现刚)
刊名	Chinese Physics Letters
	2018
期号	09页码:91-95
关键词	MOCVD Flow Field and Temperature Field in GaN-MOCVD Reactor Based on Computational Fluid Dynamics Modeling GaN
URL标识	查看原文
公开日期	[db:dc_date_available]
内容类型	期刊论文
URI标识	http://www.corc.org.cn/handle/1471x/4571789
专题	山东大学
作者单位	1.Key Lab of Semiconductor Materials Science 2.[梅书哲 3.王权 4.郝美兰 5.徐健凯 6.肖红领
推荐引用方式 GB/T 7714	Mei SZ,Wang Q,Hao ML,et al. Flow Field and Temperature Field in GaN-MOCVD Reactor Based on Computational Fluid Dynamics Modeling[J]. Chinese Physics Letters,2018(09):91-95.
APA	Mei SZ.,Wang Q.,Hao ML.,Xu JK.,Xiao HL.,...&Wang ZG.(2018).Flow Field and Temperature Field in GaN-MOCVD Reactor Based on Computational Fluid Dynamics Modeling.Chinese Physics Letters(09),91-95.
MLA	Mei SZ,et al."Flow Field and Temperature Field in GaN-MOCVD Reactor Based on Computational Fluid Dynamics Modeling".Chinese Physics Letters .09(2018):91-95.

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