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	Controlled Growth of Heterostructured Ga/GaAs Nanowires with Sharp Schottky Barrier
	Wang, Zhou; Wang, Ying; Zhou, Xinyuan; Yang, Zaixing; Yin, Yanxue; Zhang, Jie; Han, Ning; Ho, Johnny C.; Chen, Yunfa
刊名	CRYSTAL GROWTH & DESIGN
	2018
卷号	18期号:8页码:4438-4444
DOI	10.1021/acs.cgd.8b00409
URL标识	查看原文
公开日期	[db:dc_date_available]
内容类型	期刊论文
URI标识	http://www.corc.org.cn/handle/1471x/4566490
专题	山东大学
作者单位	Chinese Acad Sci, Inst Proc Engn, State Key Lab Multiphase Complex Syst, Beijing 10019
推荐引用方式 GB/T 7714	Wang, Zhou,Wang, Ying,Zhou, Xinyuan,et al. Controlled Growth of Heterostructured Ga/GaAs Nanowires with Sharp Schottky Barrier[J]. CRYSTAL GROWTH & DESIGN,2018,18(8):4438-4444.
APA	Wang, Zhou.,Wang, Ying.,Zhou, Xinyuan.,Yang, Zaixing.,Yin, Yanxue.,...&Chen, Yunfa.(2018).Controlled Growth of Heterostructured Ga/GaAs Nanowires with Sharp Schottky Barrier.CRYSTAL GROWTH & DESIGN,18(8),4438-4444.
MLA	Wang, Zhou,et al."Controlled Growth of Heterostructured Ga/GaAs Nanowires with Sharp Schottky Barrier".CRYSTAL GROWTH & DESIGN 18.8(2018):4438-4444.

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