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	Solution-Processed TiO2-Based Schottky Diodes With a Large Barrier Height
	Zhang, Xijian; Cai, Wensi; Zhang, Jiawei; Brownless, Joseph; Wilson, Joshua; Zhang, Yifei; Song, Aimin
刊名	IEEE ELECTRON DEVICE LETTERS
	2019
卷号	40期号:9页码:1378-1381
关键词	Schottky diode TiO2 anodization high frequency
DOI	10.1109/LED.2019.2928007
URL标识	查看原文
公开日期	[db:dc_date_available]
内容类型	期刊论文
URI标识	http://www.corc.org.cn/handle/1471x/4557557
专题	山东大学
作者单位	1.Shandong Univ, Ctr Nanoelect, Sch Microelect, Jinan 250100, Shandong, Peoples R China. 2.[Cai, Wensi 3.Zhang, Jiawei 4.Br
推荐引用方式 GB/T 7714	Zhang, Xijian,Cai, Wensi,Zhang, Jiawei,et al. Solution-Processed TiO2-Based Schottky Diodes With a Large Barrier Height[J]. IEEE ELECTRON DEVICE LETTERS,2019,40(9):1378-1381.
APA	Zhang, Xijian.,Cai, Wensi.,Zhang, Jiawei.,Brownless, Joseph.,Wilson, Joshua.,...&Song, Aimin.(2019).Solution-Processed TiO2-Based Schottky Diodes With a Large Barrier Height.IEEE ELECTRON DEVICE LETTERS,40(9),1378-1381.
MLA	Zhang, Xijian,et al."Solution-Processed TiO2-Based Schottky Diodes With a Large Barrier Height".IEEE ELECTRON DEVICE LETTERS 40.9(2019):1378-1381.

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