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	Multiscale simulation of lateral charge loss in Si3N4 3D NAND flash based on density functional theory
	Wu, Jixuan; Chen, Jiezhi; Jiang, Xiangwei
刊名	Journal of Physics D: Applied Physics
	2019
卷号	52期号:39
DOI	10.1088/1361-6463/ab2eaa
URL标识	查看原文
公开日期	[db:dc_date_available]
内容类型	期刊论文
URI标识	http://www.corc.org.cn/handle/1471x/4552236
专题	山东大学
作者单位	1.School of Information Science and Engineering, Shandong University, Qingdao, China 2.State Ke
推荐引用方式 GB/T 7714	Wu, Jixuan,Chen, Jiezhi,Jiang, Xiangwei. Multiscale simulation of lateral charge loss in Si3N4 3D NAND flash based on density functional theory[J]. Journal of Physics D: Applied Physics,2019,52(39).
APA	Wu, Jixuan,Chen, Jiezhi,&Jiang, Xiangwei.(2019).Multiscale simulation of lateral charge loss in Si3N4 3D NAND flash based on density functional theory.Journal of Physics D: Applied Physics,52(39).
MLA	Wu, Jixuan,et al."Multiscale simulation of lateral charge loss in Si3N4 3D NAND flash based on density functional theory".Journal of Physics D: Applied Physics 52.39(2019).

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