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	Recent development of wide bandgap semiconductor SiC substrates and device [宽禁带碳化硅单晶衬底及器件研究进展]
	Xiao L.; Xu X.
刊名	Qiangjiguang Yu Lizishu/High Power Laser and Particle Beams
	2019
卷号	31期号:4
关键词	Device failure Photoconductive semiconductor switch Physical vapor transport method Power device Silicon carbide
DOI	10.11884/HPLPB201931.190043
URL标识	查看原文
公开日期	[db:dc_date_available]
内容类型	期刊论文
URI标识	http://www.corc.org.cn/handle/1471x/4546125
专题	山东大学
作者单位	1.The State Key Laboratory of Crystal Materials, Shandong University, Jinan, 250100, China 2.The State Key Laboratory of Crystal Materi
推荐引用方式 GB/T 7714	Xiao L.,Xu X.. Recent development of wide bandgap semiconductor SiC substrates and device [宽禁带碳化硅单晶衬底及器件研究进展][J]. Qiangjiguang Yu Lizishu/High Power Laser and Particle Beams,2019,31(4).
APA	Xiao L.,&Xu X..(2019).Recent development of wide bandgap semiconductor SiC substrates and device [宽禁带碳化硅单晶衬底及器件研究进展].Qiangjiguang Yu Lizishu/High Power Laser and Particle Beams,31(4).
MLA	Xiao L.,et al."Recent development of wide bandgap semiconductor SiC substrates and device [宽禁带碳化硅单晶衬底及器件研究进展]".Qiangjiguang Yu Lizishu/High Power Laser and Particle Beams 31.4(2019).

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