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	Computational Design of Silicon Contacts on 2D Transition-Metal Dichalcogenides: The Roles of Crystalline Orientation, Doping Level, Passivation and Interfacial Layer
	Ma, Xiaolei; Fan, Zhiqiang; Wu, Jixuan; Jiang, Xiangwei; Chen, Jiezhi
刊名	Technical Digest - International Electron Devices Meeting, IEDM
	2019
卷号	2018-December页码:24.2.1-24.2.4
DOI	10.1109/IEDM.2018.8614557
会议名称	64th Annual IEEE International Electron Devices Meeting, IEDM 2018
URL标识	查看原文
会议日期	1 December 2018 through 5 December 2018
公开日期	[db:dc_date_available]
内容类型	期刊论文
URI标识	http://www.corc.org.cn/handle/1471x/4545464
专题	山东大学
作者单位	1.School of Information Science and Engineering, Shandong University, Qingdao, China 2.Institute of Semiconductors, Chinese Academy of S
推荐引用方式 GB/T 7714	Ma, Xiaolei,Fan, Zhiqiang,Wu, Jixuan,et al. Computational Design of Silicon Contacts on 2D Transition-Metal Dichalcogenides: The Roles of Crystalline Orientation, Doping Level, Passivation and Interfacial Layer[J]. Technical Digest - International Electron Devices Meeting, IEDM,2019,2018-December:24.2.1-24.2.4.
APA	Ma, Xiaolei,Fan, Zhiqiang,Wu, Jixuan,Jiang, Xiangwei,&Chen, Jiezhi.(2019).Computational Design of Silicon Contacts on 2D Transition-Metal Dichalcogenides: The Roles of Crystalline Orientation, Doping Level, Passivation and Interfacial Layer.Technical Digest - International Electron Devices Meeting, IEDM,2018-December,24.2.1-24.2.4.
MLA	Ma, Xiaolei,et al."Computational Design of Silicon Contacts on 2D Transition-Metal Dichalcogenides: The Roles of Crystalline Orientation, Doping Level, Passivation and Interfacial Layer".Technical Digest - International Electron Devices Meeting, IEDM 2018-December(2019):24.2.1-24.2.4.

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