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	Porous single-crystal GaN films obtained by direct top-down nitridation of bulk and film β-Ga 2 O 3
	Li Y.; Xiu X.; Jia Z.; Liu D.; Hua X.; Xie Z.; Tao T.; Chen P.; 等 更多
刊名	Superlattices and Microstructures
	2019
卷号	126页码:98-102
关键词	Bulk crystal GaN Nitridation Self-separation β-Ga 2 O 3
DOI	10.1016/j.spmi.2018.12.024
URL标识	查看原文
公开日期	[db:dc_date_available]
内容类型	期刊论文
URI标识	http://www.corc.org.cn/handle/1471x/4543163
专题	山东大学
作者单位	Key Laboratory of Advanced Photonic and Electronic Materials, School of Electronic Science and Engineering, Nanjing University, Nanjing, 21002
推荐引用方式 GB/T 7714	Li Y.,Xiu X.,Jia Z.,et al. Porous single-crystal GaN films obtained by direct top-down nitridation of bulk and film β-Ga 2 O 3[J]. Superlattices and Microstructures,2019,126:98-102.
APA	Li Y..,Xiu X..,Jia Z..,Liu D..,Hua X..,...&等 更多.(2019).Porous single-crystal GaN films obtained by direct top-down nitridation of bulk and film β-Ga 2 O 3.Superlattices and Microstructures,126,98-102.
MLA	Li Y.,et al."Porous single-crystal GaN films obtained by direct top-down nitridation of bulk and film β-Ga 2 O 3".Superlattices and Microstructures 126(2019):98-102.

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