CORC  > 大连理工大学
Effects of Temperature and Current Density on (Au, Pd, Ni)Sn-4 Redistribution and Ni-P Consumption in Ni/Sn3.0Ag0.5Cu/ENEPIG Flip Chip Solder Joints
Chen, Leida; Feng, Yi; Liu, Xiaoyan; Huang, Mingliang
2013
会议名称14th International Conference on Electronic Packaging Technology (ICEPT)
会议日期2013-01-01
会议地点Chinese Inst Elect, Dalian, PEOPLES R CHINA
关键词Electromigration (Au, Pd, Ni)Sn-4 Ni-P interfacial reaction
页码1064-+
会议录14th International Conference on Electronic Packaging Technology (ICEPT)
URL标识查看原文
内容类型会议论文
URI标识http://www.corc.org.cn/handle/1471x/4542904
专题大连理工大学
作者单位1.Xian Inst Microelect Technol, IC Packaging Dept, Xian 710600, Peoples R China.
2.Dalian Univ Technol, Elect Packaging Mat Lab, Dalian, Peoples R China.
推荐引用方式
GB/T 7714
Chen, Leida,Feng, Yi,Liu, Xiaoyan,et al. Effects of Temperature and Current Density on (Au, Pd, Ni)Sn-4 Redistribution and Ni-P Consumption in Ni/Sn3.0Ag0.5Cu/ENEPIG Flip Chip Solder Joints[C]. 见:14th International Conference on Electronic Packaging Technology (ICEPT). Chinese Inst Elect, Dalian, PEOPLES R CHINA. 2013-01-01.
个性服务
查看访问统计
相关权益政策
暂无数据
收藏/分享
所有评论 (0)
暂无评论
 

除非特别说明,本系统中所有内容都受版权保护,并保留所有权利。


©版权所有 ©2017 CSpace - Powered by CSpace