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	Vertical conducting ultraviolet light-emitting diodes based on p-ZnO:As/n-GaN/n-SiC heterostructure
	Shi, Zhifeng; Zhang, Yuantao; Wu, Bin; Cai, Xupu; Zhang, Jinxiang; Xia, Xiaochuan; Wang, Hui; Dong, Xin; Liang, Hongwei; Zhang, Baolin
刊名	APPLIED PHYSICS LETTERS
	2013
卷号	102页码:-
ISSN号	0003-6951
URL标识	查看原文
内容类型	期刊论文
URI标识	http://www.corc.org.cn/handle/1471x/4539370
专题	大连理工大学
作者单位	1.Jilin Univ, State Key Lab Integrated Optoelect, Coll Elect Sci & Engn, Changchun 130012, Peoples R China. 2.Dalian Univ Technol, Sch Phys & Optoelect Technol, Dalian 116023, Peoples R China. 3.Jilin Univ, State Key Lab Integrated Optoelect, Coll Elect Sci & Engn, Changchun 130012, Peoples R China. 4.Dalian Univ Technol, Sch Phys & Optoelect Technol, Dalian 116023, Peoples R China.
推荐引用方式 GB/T 7714	Shi, Zhifeng,Zhang, Yuantao,Wu, Bin,et al. Vertical conducting ultraviolet light-emitting diodes based on p-ZnO:As/n-GaN/n-SiC heterostructure[J]. APPLIED PHYSICS LETTERS,2013,102:-.
APA	Shi, Zhifeng.,Zhang, Yuantao.,Wu, Bin.,Cai, Xupu.,Zhang, Jinxiang.,...&Du, Guotong.(2013).Vertical conducting ultraviolet light-emitting diodes based on p-ZnO:As/n-GaN/n-SiC heterostructure.APPLIED PHYSICS LETTERS,102,-.
MLA	Shi, Zhifeng,et al."Vertical conducting ultraviolet light-emitting diodes based on p-ZnO:As/n-GaN/n-SiC heterostructure".APPLIED PHYSICS LETTERS 102(2013):-.

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