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	Impact of Sputtering Power on Amorphous In-Al-Zn-O Films and Thin Film Transistors Prepared by RF Magnetron Sputtering
	Xu, Weidong; Xu, Meng; Jiang, Jianfeng; Xu, Sanjin; Feng, Xianjin
刊名	IEEE TRANSACTIONS ON ELECTRON DEVICES
	2019
卷号	66期号:5页码:2219-2223
关键词	Amorphous-oxide-semiconductor (AOS) In-Al-Zn-O (IAZO) sputtering power thin film transistor (TFT)
DOI	10.1109/TED.2019.2906892
URL标识	查看原文
公开日期	[db:dc_date_available]
内容类型	期刊论文
URI标识	http://www.corc.org.cn/handle/1471x/4532115
专题	山东大学
作者单位	1.Shandong Univ, Ctr Nanoelect, Jinan 250100, Shandong, Peoples R China. 2.[Xu, Wei
推荐引用方式 GB/T 7714	Xu, Weidong,Xu, Meng,Jiang, Jianfeng,et al. Impact of Sputtering Power on Amorphous In-Al-Zn-O Films and Thin Film Transistors Prepared by RF Magnetron Sputtering[J]. IEEE TRANSACTIONS ON ELECTRON DEVICES,2019,66(5):2219-2223.
APA	Xu, Weidong,Xu, Meng,Jiang, Jianfeng,Xu, Sanjin,&Feng, Xianjin.(2019).Impact of Sputtering Power on Amorphous In-Al-Zn-O Films and Thin Film Transistors Prepared by RF Magnetron Sputtering.IEEE TRANSACTIONS ON ELECTRON DEVICES,66(5),2219-2223.
MLA	Xu, Weidong,et al."Impact of Sputtering Power on Amorphous In-Al-Zn-O Films and Thin Film Transistors Prepared by RF Magnetron Sputtering".IEEE TRANSACTIONS ON ELECTRON DEVICES 66.5(2019):2219-2223.

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