QQ客服 官方微博 反馈留言

	A 2 nm low temperature GaN spacer to improve the transport properties of two-dimensional electron gas in AlGaN/InAlN/AlN/GaN heterostructures
	Ding, Jieqin; Wang, Xiaoliang; Xiao, Hongling; Wang, Cuimei; Chen, Hong; Bi, Yang; Deng, Qinwen; Zhang, Jingwen; Hou, Xun
刊名	APPLIED PHYSICS LETTERS
	2012
卷号	101期号:[db:dc_citation_issue]
ISSN号	0003-6951
DOI	[db:dc_identifier_doi]
URL标识	查看原文
WOS记录号	[DB:DC_IDENTIFIER_WOSID]
内容类型	期刊论文
URI标识	http://www.corc.org.cn/handle/1471x/4452851
专题	西安交通大学
推荐引用方式 GB/T 7714	Ding, Jieqin,Wang, Xiaoliang,Xiao, Hongling,et al. A 2 nm low temperature GaN spacer to improve the transport properties of two-dimensional electron gas in AlGaN/InAlN/AlN/GaN heterostructures[J]. APPLIED PHYSICS LETTERS,2012,101([db:dc_citation_issue]).
APA	Ding, Jieqin.,Wang, Xiaoliang.,Xiao, Hongling.,Wang, Cuimei.,Chen, Hong.,...&Hou, Xun.(2012).A 2 nm low temperature GaN spacer to improve the transport properties of two-dimensional electron gas in AlGaN/InAlN/AlN/GaN heterostructures.APPLIED PHYSICS LETTERS,101([db:dc_citation_issue]).
MLA	Ding, Jieqin,et al."A 2 nm low temperature GaN spacer to improve the transport properties of two-dimensional electron gas in AlGaN/InAlN/AlN/GaN heterostructures".APPLIED PHYSICS LETTERS 101.[db:dc_citation_issue](2012).

个性服务

查看访问统计

相关权益政策

暂无数据

收藏/分享

除非特别说明，本系统中所有内容都受版权保护，并保留所有权利。