| A potentially optimal interface of ZnO/Si predicted by the good-matching-site approach | |
| Ye, Fei; Zhang, Xiang Yu; Cao, Shan Peng; Zhang, Chi | |
| 刊名 | JOURNAL OF CRYSTAL GROWTH
 |
| 2015 | |
| 卷号 | 432页码:129-132 |
| 关键词 | Interfacial structure Lattice matching Steps Zinc compounds |
| ISSN号 | 0022-0248 |
| URL标识 | 查看原文 |
| 内容类型 | 期刊论文 |
| URI标识 | http://www.corc.org.cn/handle/1471x/4407910 |
| 专题 | 大连理工大学 |
| 作者单位 | 1.Dalian Univ Technol, Sch Mat Sci & Engn, Minist Educ, Key Lab Mat Modificat Laser Ion & Electron Beams, Dalian 116024, Peoples R China. 2.Tsinghua Univ, Sch Mat Sci & Engn, Beijing 100086, Peoples R China. |
| 推荐引用方式 GB/T 7714 | Ye, Fei,Zhang, Xiang Yu,Cao, Shan Peng,et al. A potentially optimal interface of ZnO/Si predicted by the good-matching-site approach[J]. JOURNAL OF CRYSTAL GROWTH,2015,432:129-132. |
| APA | Ye, Fei,Zhang, Xiang Yu,Cao, Shan Peng,&Zhang, Chi.(2015).A potentially optimal interface of ZnO/Si predicted by the good-matching-site approach.JOURNAL OF CRYSTAL GROWTH,432,129-132. |
| MLA | Ye, Fei,et al."A potentially optimal interface of ZnO/Si predicted by the good-matching-site approach".JOURNAL OF CRYSTAL GROWTH 432(2015):129-132. |
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