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Effect of Hydrogen in Size-Limited Growth of Graphene by Atmospheric Pressure Chemical Vapor Deposition
Zhang, Haoran; Zhang, Yanhui; Wang, Bin; Chen, Zhiying; Sui, Yanping; Zhang, Yaqian; Tang, Chunmiao; Zhu, Bo; Xie, Xiaoming; Yu, Guanghui
刊名JOURNAL OF ELECTRONIC MATERIALS
2015
卷号44页码:79-86
关键词Graphene CVD hydrogen growth rate domain size
ISSN号0361-5235
URL标识查看原文
内容类型期刊论文
URI标识http://www.corc.org.cn/handle/1471x/4405156
专题大连理工大学
作者单位1.Chinese Acad Sci, State Key Lab Funct Mat Informat, Shanghai Inst Microsyst & Informat Technol, Shanghai 200050, Peoples R China.
2.Dalian Univ Technol, Sch Phys & Optoelect Technol, Dalian 116024, Peoples R China.
3.Chinese Acad Sci, Microwave Devices & Integrated Circuits Dept, Inst Microelect, Beijing 100029, Peoples R China.
推荐引用方式
GB/T 7714
Zhang, Haoran,Zhang, Yanhui,Wang, Bin,et al. Effect of Hydrogen in Size-Limited Growth of Graphene by Atmospheric Pressure Chemical Vapor Deposition[J]. JOURNAL OF ELECTRONIC MATERIALS,2015,44:79-86.
APA Zhang, Haoran.,Zhang, Yanhui.,Wang, Bin.,Chen, Zhiying.,Sui, Yanping.,...&Liu, Xinyu.(2015).Effect of Hydrogen in Size-Limited Growth of Graphene by Atmospheric Pressure Chemical Vapor Deposition.JOURNAL OF ELECTRONIC MATERIALS,44,79-86.
MLA Zhang, Haoran,et al."Effect of Hydrogen in Size-Limited Growth of Graphene by Atmospheric Pressure Chemical Vapor Deposition".JOURNAL OF ELECTRONIC MATERIALS 44(2015):79-86.
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