Effect of Hydrogen in Size-Limited Growth of Graphene by Atmospheric Pressure Chemical Vapor Deposition | |
Zhang, Haoran; Zhang, Yanhui; Wang, Bin; Chen, Zhiying; Sui, Yanping; Zhang, Yaqian; Tang, Chunmiao; Zhu, Bo; Xie, Xiaoming; Yu, Guanghui | |
刊名 | JOURNAL OF ELECTRONIC MATERIALS
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2015 | |
卷号 | 44页码:79-86 |
关键词 | Graphene CVD hydrogen growth rate domain size |
ISSN号 | 0361-5235 |
URL标识 | 查看原文 |
内容类型 | 期刊论文 |
URI标识 | http://www.corc.org.cn/handle/1471x/4405156 |
专题 | 大连理工大学 |
作者单位 | 1.Chinese Acad Sci, State Key Lab Funct Mat Informat, Shanghai Inst Microsyst & Informat Technol, Shanghai 200050, Peoples R China. 2.Dalian Univ Technol, Sch Phys & Optoelect Technol, Dalian 116024, Peoples R China. 3.Chinese Acad Sci, Microwave Devices & Integrated Circuits Dept, Inst Microelect, Beijing 100029, Peoples R China. |
推荐引用方式 GB/T 7714 | Zhang, Haoran,Zhang, Yanhui,Wang, Bin,et al. Effect of Hydrogen in Size-Limited Growth of Graphene by Atmospheric Pressure Chemical Vapor Deposition[J]. JOURNAL OF ELECTRONIC MATERIALS,2015,44:79-86. |
APA | Zhang, Haoran.,Zhang, Yanhui.,Wang, Bin.,Chen, Zhiying.,Sui, Yanping.,...&Liu, Xinyu.(2015).Effect of Hydrogen in Size-Limited Growth of Graphene by Atmospheric Pressure Chemical Vapor Deposition.JOURNAL OF ELECTRONIC MATERIALS,44,79-86. |
MLA | Zhang, Haoran,et al."Effect of Hydrogen in Size-Limited Growth of Graphene by Atmospheric Pressure Chemical Vapor Deposition".JOURNAL OF ELECTRONIC MATERIALS 44(2015):79-86. |
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