Sunlight-induced resistance changes and their effects on the semiconductor-metal transition behavior of VO2 film | |
Wang, Minhuan; Bian, Jiming; Sun, Hongjun; Liu, Hongzhu; Li, Xiaoxuan; Luo, Yingmin; Huang, Huolin; Zhang, Yuzhi | |
刊名 | JOURNAL OF MATERIALS SCIENCE
![]() |
2016 | |
卷号 | 51页码:8233-8239 |
ISSN号 | 0022-2461 |
URL标识 | 查看原文 |
内容类型 | 期刊论文 |
URI标识 | http://www.corc.org.cn/handle/1471x/4369478 |
专题 | 大连理工大学 |
作者单位 | 1.Dalian Univ Technol, Sch Phys & Optoelect Technol, Key Lab Mat Modificat Laser Ion & Electron Beams, Minist Educ, Dalian 116024, Peoples R China. 2.Dalian Univ Technol, Sch Phys & Optoelect Technol, Key Lab Mat Modificat Laser Ion & Electron Beams, Minist Educ, Dalian 116024, Peoples R China. 3.Chinese Acad Sci, Key Lab Inorgan Coating Mat, Shanghai 200050, Peoples R China. 4.Chinese Acad Sci, Key Lab Inorgan Coating Mat, Shanghai 200050, Peoples R China. |
推荐引用方式 GB/T 7714 | Wang, Minhuan,Bian, Jiming,Sun, Hongjun,et al. Sunlight-induced resistance changes and their effects on the semiconductor-metal transition behavior of VO2 film[J]. JOURNAL OF MATERIALS SCIENCE,2016,51:8233-8239. |
APA | Wang, Minhuan.,Bian, Jiming.,Sun, Hongjun.,Liu, Hongzhu.,Li, Xiaoxuan.,...&Zhang, Yuzhi.(2016).Sunlight-induced resistance changes and their effects on the semiconductor-metal transition behavior of VO2 film.JOURNAL OF MATERIALS SCIENCE,51,8233-8239. |
MLA | Wang, Minhuan,et al."Sunlight-induced resistance changes and their effects on the semiconductor-metal transition behavior of VO2 film".JOURNAL OF MATERIALS SCIENCE 51(2016):8233-8239. |
个性服务 |
查看访问统计 |
相关权益政策 |
暂无数据 |
收藏/分享 |
除非特别说明,本系统中所有内容都受版权保护,并保留所有权利。
修改评论