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	Heavy-Ion Induced Single Event Upsets in Advanced 65 nm Radiation Hardened FPGAs
	Cai, Chang; Fan, Xue; Liu, Jie; Li, Dongqing; Liu, Tianqi; Ke, Lingyun; Zhao, Peixiong; He, Ze
	2019
卷号	8期号:3
URL标识	查看原文
WOS记录号	WOS:000464263600003
内容类型	期刊论文
URI标识	http://www.corc.org.cn/handle/1471x/4362079
专题	成都理工大学
作者单位	1.[1]Chinese Acad Sci, Inst Modern Phys, Lanzhou 730000, Gansu, Peoples R China 2.[2]Chengdu Technol Univ, Chengdu 611730, Sichuan, Peoples R China 3.[3]Univ Chinese Acad Sci, Beijing 100049, Peoples R China
推荐引用方式 GB/T 7714	Cai, Chang,Fan, Xue,Liu, Jie,et al. Heavy-Ion Induced Single Event Upsets in Advanced 65 nm Radiation Hardened FPGAs[J],2019,8(3).
APA	Cai, Chang.,Fan, Xue.,Liu, Jie.,Li, Dongqing.,Liu, Tianqi.,...&He, Ze.(2019).Heavy-Ion Induced Single Event Upsets in Advanced 65 nm Radiation Hardened FPGAs.,8(3).
MLA	Cai, Chang,et al."Heavy-Ion Induced Single Event Upsets in Advanced 65 nm Radiation Hardened FPGAs".8.3(2019).

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