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	Electrical detection of trace zinc ions with an extended gate-AlGaN/GaN high electron mobility sensor
	Gu, Le; Yang, Shuai; Miao, Bin; Gu, Zhiqi; Wang, Jin; Sun, Wei; Wu, Dongmin; Li, Jiadong
	2019
卷号	144期号:2页码:663-668
URL标识	查看原文
WOS记录号	WOS:000457297600033
内容类型	期刊论文
URI标识	http://www.corc.org.cn/handle/1471x/4357427
专题	成都理工大学
作者单位	1.[1]Chengdu Univ Technol, Coll Nucl Technol & Automat Engn, Chengdu 610059, Sichuan, Peoples R China 2.[2]Chinese Acad Sci, Suzhou Inst Nanotech & Nanobion, I Lab, Suzhou 215125, Peoples R China 3.[3]Univ Sci & Technol China, Sch Nano Technol & Nano Bion, Hefei 230026, Anhui, Peoples R China 4.[4]Shanghai Univ, Coll Mat Sci & Engn, Shanghai 200444, Peoples R China 5.[5]Chinese Acad Sci, Suzhou Inst Nanotech & Nanobion, Key Lab Nanodevices & Applicat, Suzhou 215123, Peoples R China
推荐引用方式 GB/T 7714	Gu, Le,Yang, Shuai,Miao, Bin,et al. Electrical detection of trace zinc ions with an extended gate-AlGaN/GaN high electron mobility sensor[J],2019,144(2):663-668.
APA	Gu, Le.,Yang, Shuai.,Miao, Bin.,Gu, Zhiqi.,Wang, Jin.,...&Li, Jiadong.(2019).Electrical detection of trace zinc ions with an extended gate-AlGaN/GaN high electron mobility sensor.,144(2),663-668.
MLA	Gu, Le,et al."Electrical detection of trace zinc ions with an extended gate-AlGaN/GaN high electron mobility sensor".144.2(2019):663-668.

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