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	Separating interface magnetoresistance from bulk magnetoresistance in silicon-based Schottky heterojunctions device
	He, Xiong; He, Bin; Yu, Han; Sun, Zhigang; He, Jun; Zhao, Wenyu
刊名	Journal of Applied Physics
	2019
卷号	125期号:22
ISSN号	0021-8979
DOI	10.1063/1.5097736
URL标识	查看原文
收录类别	EI
语种	英语
内容类型	期刊论文
URI标识	http://www.corc.org.cn/handle/1471x/4232378
专题	武汉大学
推荐引用方式 GB/T 7714	He, Xiong,He, Bin,Yu, Han,et al. Separating interface magnetoresistance from bulk magnetoresistance in silicon-based Schottky heterojunctions device[J]. Journal of Applied Physics,2019,125(22).
APA	He, Xiong,He, Bin,Yu, Han,Sun, Zhigang,He, Jun,&Zhao, Wenyu.(2019).Separating interface magnetoresistance from bulk magnetoresistance in silicon-based Schottky heterojunctions device.Journal of Applied Physics,125(22).
MLA	He, Xiong,et al."Separating interface magnetoresistance from bulk magnetoresistance in silicon-based Schottky heterojunctions device".Journal of Applied Physics 125.22(2019).

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