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	Enhanced Photoresponsivity of a GaAs Nanowire Metal-Semiconductor-Metal Photodetector by Adjusting the Fermi Level
	Chen, Xue; Wang, Dengkui; Wang, Tuo; Yang, Zhenyu; Zou, Xuming; Wang, Peng; Luo, Wenjin; Li, Qing; Liao, Lei; Hu, Weida
刊名	ACS APPLIED MATERIALS & INTERFACES
	2019
卷号	11期号:36
关键词	GaAs nanowire photodetector doping Fermi level Schottky contact built-in electric field
ISSN号	1944-8244
DOI	10.1021/acsami.9b07891
URL标识	查看原文
收录类别	SCIE
语种	英语
内容类型	期刊论文
URI标识	http://www.corc.org.cn/handle/1471x/4215669
专题	武汉大学
推荐引用方式 GB/T 7714	Chen, Xue,Wang, Dengkui,Wang, Tuo,et al. Enhanced Photoresponsivity of a GaAs Nanowire Metal-Semiconductor-Metal Photodetector by Adjusting the Fermi Level[J]. ACS APPLIED MATERIALS & INTERFACES,2019,11(36).
APA	Chen, Xue.,Wang, Dengkui.,Wang, Tuo.,Yang, Zhenyu.,Zou, Xuming.,...&Wei, Zhipeng.(2019).Enhanced Photoresponsivity of a GaAs Nanowire Metal-Semiconductor-Metal Photodetector by Adjusting the Fermi Level.ACS APPLIED MATERIALS & INTERFACES,11(36).
MLA	Chen, Xue,et al."Enhanced Photoresponsivity of a GaAs Nanowire Metal-Semiconductor-Metal Photodetector by Adjusting the Fermi Level".ACS APPLIED MATERIALS & INTERFACES 11.36(2019).

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