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	Chemical effect on the energy lose for slow ion channeling a narrow band gap semiconductor
	Li, Chang-kai; Liu, Sheng; Zhang, Feng-Shou
刊名	NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS
	2019
卷号	444
关键词	Electronic stopping power TDDFT Chemical bond Electron localization function
ISSN号	0168-583X
DOI	10.1016/j.nimb.2019.01.027
URL标识	查看原文
收录类别	SCIE
语种	英语
内容类型	期刊论文
URI标识	http://www.corc.org.cn/handle/1471x/4215242
专题	武汉大学
推荐引用方式 GB/T 7714	Li, Chang-kai,Liu, Sheng,Zhang, Feng-Shou. Chemical effect on the energy lose for slow ion channeling a narrow band gap semiconductor[J]. NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS,2019,444.
APA	Li, Chang-kai,Liu, Sheng,&Zhang, Feng-Shou.(2019).Chemical effect on the energy lose for slow ion channeling a narrow band gap semiconductor.NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS,444.
MLA	Li, Chang-kai,et al."Chemical effect on the energy lose for slow ion channeling a narrow band gap semiconductor".NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS 444(2019).

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