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	Reduced Contact Resistance Between Meta and n-Ge by Insertion of ZnO with Argon Plasma Treatment
	Zhang, Yi; Han, Genquan; Wu, Hao; Wang, Xiao; Liu, Yan; Zhang, Jincheng; Liu, Huan; Zheng, Haihua; Chen, Xue; Liu, Chang
刊名	NANOSCALE RESEARCH LETTERS
	2018
卷号	13
关键词	Germanium Fermi-level pinning Ohmic contact Argon plasma ZnO
ISSN号	1556-276X
DOI	10.1186/s11671-018-2650-y
URL标识	查看原文
收录类别	SCIE
语种	英语
内容类型	期刊论文
URI标识	http://www.corc.org.cn/handle/1471x/4214413
专题	武汉大学
推荐引用方式 GB/T 7714	Zhang, Yi,Han, Genquan,Wu, Hao,et al. Reduced Contact Resistance Between Meta and n-Ge by Insertion of ZnO with Argon Plasma Treatment[J]. NANOSCALE RESEARCH LETTERS,2018,13.
APA	Zhang, Yi.,Han, Genquan.,Wu, Hao.,Wang, Xiao.,Liu, Yan.,...&Hao, Yue.(2018).Reduced Contact Resistance Between Meta and n-Ge by Insertion of ZnO with Argon Plasma Treatment.NANOSCALE RESEARCH LETTERS,13.
MLA	Zhang, Yi,et al."Reduced Contact Resistance Between Meta and n-Ge by Insertion of ZnO with Argon Plasma Treatment".NANOSCALE RESEARCH LETTERS 13(2018).

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