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	Restraining strategy of the stone-Wales defect effect on graphene nanoribbon MOSFETs
	Lv, Yawei; Liu, Anqi; Huang, Qijun; Chang, Sheng; Qin, Wenjing; Ye, Shizhuo; Wang, Hao; He, Jin
刊名	IEEE Electron Device Letters
	2018
卷号	39期号:7
ISSN号	0741-3106
DOI	10.1109/LED.2018.2832632
URL标识	查看原文
收录类别	EI
语种	英语
内容类型	期刊论文
URI标识	http://www.corc.org.cn/handle/1471x/4213167
专题	武汉大学
推荐引用方式 GB/T 7714	Lv, Yawei,Liu, Anqi,Huang, Qijun,et al. Restraining strategy of the stone-Wales defect effect on graphene nanoribbon MOSFETs[J]. IEEE Electron Device Letters,2018,39(7).
APA	Lv, Yawei.,Liu, Anqi.,Huang, Qijun.,Chang, Sheng.,Qin, Wenjing.,...&He, Jin.(2018).Restraining strategy of the stone-Wales defect effect on graphene nanoribbon MOSFETs.IEEE Electron Device Letters,39(7).
MLA	Lv, Yawei,et al."Restraining strategy of the stone-Wales defect effect on graphene nanoribbon MOSFETs".IEEE Electron Device Letters 39.7(2018).

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