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BRANCHING PHENOMENA IN SI3N4 WHISKERS
Y. C. Zhou ; X. Chang ; J. Zhou ; F. Xia
刊名Materials Letters
1992
卷号14期号:1页码:55-57
ISSN号0167-577X
中文摘要The branching phenomena in both alpha-Si3N4 and beta-Si3N4 whiskers were investigated by transmission electron microscopy. Two mechanisms appear to be operating for the branching of alpha-Si3N4 whiskers. One operates when the growth conditions are satisfied for more than two different growth directions, resulting in branched alpha-Si3N4 whiskers. The second mechanism results in two whiskers, with different growth directions, growing together to form a branched bicrystalline alpha-Si3N4 whisker; one acting as a branch of the other. Only the former branching mechanism was found to operate for beta-Si3N, whiskers.
原文出处://WOS:A1992JC20000011
公开日期2012-04-14
内容类型期刊论文
源URL[http://ir.imr.ac.cn/handle/321006/39373]  
专题金属研究所_中国科学院金属研究所
推荐引用方式
GB/T 7714
Y. C. Zhou,X. Chang,J. Zhou,et al. BRANCHING PHENOMENA IN SI3N4 WHISKERS[J]. Materials Letters,1992,14(1):55-57.
APA Y. C. Zhou,X. Chang,J. Zhou,&F. Xia.(1992).BRANCHING PHENOMENA IN SI3N4 WHISKERS.Materials Letters,14(1),55-57.
MLA Y. C. Zhou,et al."BRANCHING PHENOMENA IN SI3N4 WHISKERS".Materials Letters 14.1(1992):55-57.
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