INTERFACIAL REACTIONS ON ANNEALING CU/AL MULTILAYER THIN-FILMS

CORC > 金属研究所 > 中国科学院金属研究所

	INTERFACIAL REACTIONS ON ANNEALING CU/AL MULTILAYER THIN-FILMS
	H. G. Jiang ; J. Y. Dai ; H. Y. Tong ; B. Z. Ding ; Q. H. Song ; Z. Q. Hu
刊名	Journal of Applied Physics
	1993
卷号	74 期号:10 页码:6165-6169
关键词	growth kinetics copper interdiffusion aluminum couples bilayers silicon
ISSN号	0021-8979
中文摘要	Thin film reactions of Cu/Al multilayer films were investigated by differentia scanning calorimetry and transmission electron microscopy. Sequential intermetallic compound formation was found in the temperature range from 300 to 620 K. With excess copper present in the as-deposited trilayer and multilayer films, the observed sequence was CuAl2 and Cu9Al4, and the interfacial reactions were controlled by interfacial and grain boundary diffusion. The activation energies for the formation of CuAl2 and Cu9Al4 are 0.78+/-0.11 and 0.83+/-0.2 eV, respectively.
原文出处	://WOS:A1993MF84000036
公开日期	2012-04-14
内容类型	期刊论文
源URL	[http://ir.imr.ac.cn/handle/321006/39034]
专题	金属研究所_中国科学院金属研究所
推荐引用方式 GB/T 7714	H. G. Jiang,J. Y. Dai,H. Y. Tong,et al. INTERFACIAL REACTIONS ON ANNEALING CU/AL MULTILAYER THIN-FILMS[J]. Journal of Applied Physics,1993,74(10):6165-6169.
APA	H. G. Jiang,J. Y. Dai,H. Y. Tong,B. Z. Ding,Q. H. Song,&Z. Q. Hu.(1993).INTERFACIAL REACTIONS ON ANNEALING CU/AL MULTILAYER THIN-FILMS.Journal of Applied Physics,74(10),6165-6169.
MLA	H. G. Jiang,et al."INTERFACIAL REACTIONS ON ANNEALING CU/AL MULTILAYER THIN-FILMS".Journal of Applied Physics 74.10(1993):6165-6169.