HYDROGENIC IMPURITY STATES IN LATERAL-SURFACE-MODULATION QUANTUM WIRES

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	HYDROGENIC IMPURITY STATES IN LATERAL-SURFACE-MODULATION QUANTUM WIRES
	Z. Y. Deng ; H. Sun ; S. W. Gu
刊名	Communications in Theoretical Physics
	1994
卷号	21 期号:1 页码:17-24
关键词	well wires optical anisotropy binding-energy confinement model
ISSN号	0253-6102
中文摘要	We calculate hydrogenic impurity binding energy in quasi-one-dimensional GaAs/AlAs quantum wires with periodical lateral surface structure by making use of a variational approach. By a coordinate transformation, the structured interfaces of the wires are transformed into planar ones so that the boundary conditions of the electronic wave functions can be satisfied exactly on the interfaces. The dependence of the binding energies on the positions of the impurities and on the lateral surface structures is studied.
原文出处	://WOS:A1994NM49700003
公开日期	2012-04-14
内容类型	期刊论文
源URL	[http://ir.imr.ac.cn/handle/321006/38807]
专题	金属研究所_中国科学院金属研究所
推荐引用方式 GB/T 7714	Z. Y. Deng,H. Sun,S. W. Gu. HYDROGENIC IMPURITY STATES IN LATERAL-SURFACE-MODULATION QUANTUM WIRES[J]. Communications in Theoretical Physics,1994,21(1):17-24.
APA	Z. Y. Deng,H. Sun,&S. W. Gu.(1994).HYDROGENIC IMPURITY STATES IN LATERAL-SURFACE-MODULATION QUANTUM WIRES.Communications in Theoretical Physics,21(1),17-24.
MLA	Z. Y. Deng,et al."HYDROGENIC IMPURITY STATES IN LATERAL-SURFACE-MODULATION QUANTUM WIRES".Communications in Theoretical Physics 21.1(1994):17-24.