EFFECT OF B ON ELECTRONIC DENSITIES OF DEFECTS AND BULK IN NI3AL ALLOYS

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	EFFECT OF B ON ELECTRONIC DENSITIES OF DEFECTS AND BULK IN NI3AL ALLOYS
	W. Deng ; L. Y. Xiong ; S. H. Wang ; J. T. Guo ; C. W. Lung
刊名	Journal of Materials Science Letters
	1994
卷号	13 期号:5 页码:313-315
关键词	intergranular fracture grain-boundaries boron sulfur segregation microscope model
ISSN号	0261-8028
原文出处	://WOS:A1994NA77100004
公开日期	2012-04-14
内容类型	期刊论文
源URL	[http://ir.imr.ac.cn/handle/321006/38806]
专题	金属研究所_中国科学院金属研究所
推荐引用方式 GB/T 7714	W. Deng,L. Y. Xiong,S. H. Wang,et al. EFFECT OF B ON ELECTRONIC DENSITIES OF DEFECTS AND BULK IN NI3AL ALLOYS[J]. Journal of Materials Science Letters,1994,13(5):313-315.
APA	W. Deng,L. Y. Xiong,S. H. Wang,J. T. Guo,&C. W. Lung.(1994).EFFECT OF B ON ELECTRONIC DENSITIES OF DEFECTS AND BULK IN NI3AL ALLOYS.Journal of Materials Science Letters,13(5),313-315.
MLA	W. Deng,et al."EFFECT OF B ON ELECTRONIC DENSITIES OF DEFECTS AND BULK IN NI3AL ALLOYS".Journal of Materials Science Letters 13.5(1994):313-315.