Near-ultraviolet and near-infrared electroluminescence from an indium-tin-oxide film native Si oxide/p-Si structure

CORC > 金属研究所 > 中国科学院金属研究所

	Near-ultraviolet and near-infrared electroluminescence from an indium-tin-oxide film native Si oxide/p-Si structure
	Y. Q. Wang ; T. P. Zhao ; J. Liu ; G. G. Qin
刊名	Applied Physics Letters
	1999
卷号	74 期号:25 页码:3815-3817
关键词	oxidized porous silicon light-emission
ISSN号	0003-6951
中文摘要	We have deposited indium-tin-oxide (ITO) films on p-Si (100) substrates with native Si oxide layers on their surfaces using the electron beam depositing technique. After the ITO/native Si oxide/p-Si structure was annealed in a N-2 ambient, electroluminescence spectra with two peaks at near-ultraviolet (similar to 360 nm) and near-infrared (similar to 820 nm) have been measured under a forward bias of 6 V or larger. The experimental results have been interpreted tentatively using the tunneling-luminescence center process. It is considered that the two electroluminescence peaks originate from two groups of luminescence centers in the native Si oxide layers. The luminescence centers responsible for the near-ultraviolet peak have been discussed. (C) 1999 American Institute of Physics. [S0003-6951(99)05125-6].
原文出处	://WOS:000080857600021
公开日期	2012-04-14
内容类型	期刊论文
源URL	[http://ir.imr.ac.cn/handle/321006/37526]
专题	金属研究所_中国科学院金属研究所
推荐引用方式 GB/T 7714	Y. Q. Wang,T. P. Zhao,J. Liu,et al. Near-ultraviolet and near-infrared electroluminescence from an indium-tin-oxide film native Si oxide/p-Si structure[J]. Applied Physics Letters,1999,74(25):3815-3817.
APA	Y. Q. Wang,T. P. Zhao,J. Liu,&G. G. Qin.(1999).Near-ultraviolet and near-infrared electroluminescence from an indium-tin-oxide film native Si oxide/p-Si structure.Applied Physics Letters,74(25),3815-3817.
MLA	Y. Q. Wang,et al."Near-ultraviolet and near-infrared electroluminescence from an indium-tin-oxide film native Si oxide/p-Si structure".Applied Physics Letters 74.25(1999):3815-3817.