Room-temperature weak ferromagnetism of amorphous HfAlOx thin films deposited by pulsed laser deposition

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	Room-temperature weak ferromagnetism of amorphous HfAlOx thin films deposited by pulsed laser deposition
	X. Y. Qiu ; Q. M. Liu ; F. Gao ; L. Y. Lu ; J. M. Liu
刊名	Applied Physics Letters
	2006
卷号	89 期号:24
关键词	thermal-stability hfo2 magnetism semiconductors oxides cab6
ISSN号	0003-6951
中文摘要	The room-temperature weak ferromagnetism of amorphous HfAlOx thin films deposited by pulsed laser deposition on various substrates in oxygen-defective ambient is demonstrated. The magnetization is independent of film thickness, but depends on substrates and deposition temperatures. A magnetic moment of similar to 0.26 mu(B) per HfAlOx f.u. is recorded for HfAlOx films deposited under optimized conditions [deposited at 600 degrees C on (001) sapphire in high vacuum]. It is argued that interfacial defects are one of the possible sources of the weak ferromagnetism. (c) 2006 American Institute of Physics.
原文出处	://WOS:000242886500078
公开日期	2012-04-14
内容类型	期刊论文
源URL	[http://ir.imr.ac.cn/handle/321006/34433]
专题	金属研究所_中国科学院金属研究所
推荐引用方式 GB/T 7714	X. Y. Qiu,Q. M. Liu,F. Gao,et al. Room-temperature weak ferromagnetism of amorphous HfAlOx thin films deposited by pulsed laser deposition[J]. Applied Physics Letters,2006,89(24).
APA	X. Y. Qiu,Q. M. Liu,F. Gao,L. Y. Lu,&J. M. Liu.(2006).Room-temperature weak ferromagnetism of amorphous HfAlOx thin films deposited by pulsed laser deposition.Applied Physics Letters,89(24).
MLA	X. Y. Qiu,et al."Room-temperature weak ferromagnetism of amorphous HfAlOx thin films deposited by pulsed laser deposition".Applied Physics Letters 89.24(2006).