Synthesis and photoluminescent property of AlN nanobelt array

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	Synthesis and photoluminescent property of AlN nanobelt array
	Y. B. Tang ; H. T. Cong ; F. Li ; H. M. Cheng
刊名	Diamond and Related Materials
	2007
卷号	16 期号:3 页码:537-541
关键词	aluminum nitride nanostructures optical properties nanocrystalline aluminum nitride field-emission growth nanotubes nanowires parameters defects route gan
ISSN号	0925-9635
中文摘要	An AlN nanobelt array has been synthesized on Si substrate by an oxide-assisted vapor transport and condensation method at 900 degrees C. The nanobelts are 1-3 mu m in length, 20-150 mu m in width, and the ratio of width to thickness is in the range of 2-5. The nanobelts are single-crystalline hexagonal wurtzite AlN with [001] growth direction. The growth mechanism and photoluminescent property of the AlN nanobelt array were discussed. (c) 2006 Elsevier B.V. All rights reserved.
原文出处	://WOS:000244827100020
公开日期	2012-04-13
内容类型	期刊论文
源URL	[http://ir.imr.ac.cn/handle/321006/33831]
专题	金属研究所_中国科学院金属研究所
推荐引用方式 GB/T 7714	Y. B. Tang,H. T. Cong,F. Li,et al. Synthesis and photoluminescent property of AlN nanobelt array[J]. Diamond and Related Materials,2007,16(3):537-541.
APA	Y. B. Tang,H. T. Cong,F. Li,&H. M. Cheng.(2007).Synthesis and photoluminescent property of AlN nanobelt array.Diamond and Related Materials,16(3),537-541.
MLA	Y. B. Tang,et al."Synthesis and photoluminescent property of AlN nanobelt array".Diamond and Related Materials 16.3(2007):537-541.