Tin whisker growth on bulk Sn-Pb eutectic doping with Nd

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	Tin whisker growth on bulk Sn-Pb eutectic doping with Nd
	M. Liu ; A. P. Xian
刊名	Microelectronics Reliability
	2009
卷号	49 期号:6 页码:667-672
关键词	free solder alloys surface cu joints
ISSN号	0026-2714
中文摘要	Tin whisker growth is a serious reliability concern for electronics using high-density packaging. Whisker growth behavior of tin lead eutectic solders doped with different neodymium concentration (5-0.1wt.%) was studied in present work. Results indicate that the Nd in the all of the Sn-Pb-Nd alloys mainly exists in NdSn(3) intermetallic compound, and that the distribution of the NdSn(3) phase is very non-uniform in the alloy with low Nd concentration. Tin whiskers growth was observed on all samples doped with Nd. All of these whiskers were seen to originate from the NdSn(3) phase, it appears that the Pb does not suppress whisker growth in these alloy because it does not influence the formation of the tin-rare earth intermetallic compound. These results suggest that the addition of rare earth elements into tin alloy systems renders whisker formation nearly inevitable. Therefore, any suggestion to dope tin-based solders with rare earth elements for application in high-density electronic packaging should be carefully reconsidered. (C) 2009 Published by Elsevier Ltd.
原文出处	://WOS:000267098700016
公开日期	2012-04-13
内容类型	期刊论文
源URL	[http://210.72.142.130/handle/321006/32100]
专题	金属研究所_中国科学院金属研究所
推荐引用方式 GB/T 7714	M. Liu,A. P. Xian. Tin whisker growth on bulk Sn-Pb eutectic doping with Nd[J]. Microelectronics Reliability,2009,49(6):667-672.
APA	M. Liu,&A. P. Xian.(2009).Tin whisker growth on bulk Sn-Pb eutectic doping with Nd.Microelectronics Reliability,49(6),667-672.
MLA	M. Liu,et al."Tin whisker growth on bulk Sn-Pb eutectic doping with Nd".Microelectronics Reliability 49.6(2009):667-672.