| Graphene Nanoribbon Tunnel Field-Effect Transistor via Segmented Edge Saturation | |
| Lv, Yawei; Qin, Wenjing; Huang, Qijun; Chang, Sheng; Wang, Hao; He, Jin | |
| 刊名 | IEEE TRANSACTIONS ON ELECTRON DEVICES
 |
| 2017 | |
| 卷号 | 64期号:6 |
| 关键词 | Edge saturation graphene nanoribbon (GNR) subthreshold swing (SS) tunnel FET (TFET) |
| ISSN号 | 0018-9383 |
| DOI | 10.1109/TED.2017.2691360 |
| URL标识 | 查看原文 |
| 收录类别 | SCIE ; EI |
| 语种 | 英语 |
| 内容类型 | 期刊论文 |
| URI标识 | http://www.corc.org.cn/handle/1471x/4104084 |
| 专题 | 武汉大学 |
| 推荐引用方式 GB/T 7714 | Lv, Yawei,Qin, Wenjing,Huang, Qijun,et al. Graphene Nanoribbon Tunnel Field-Effect Transistor via Segmented Edge Saturation[J]. IEEE TRANSACTIONS ON ELECTRON DEVICES,2017,64(6). |
| APA | Lv, Yawei,Qin, Wenjing,Huang, Qijun,Chang, Sheng,Wang, Hao,&He, Jin.(2017).Graphene Nanoribbon Tunnel Field-Effect Transistor via Segmented Edge Saturation.IEEE TRANSACTIONS ON ELECTRON DEVICES,64(6). |
| MLA | Lv, Yawei,et al."Graphene Nanoribbon Tunnel Field-Effect Transistor via Segmented Edge Saturation".IEEE TRANSACTIONS ON ELECTRON DEVICES 64.6(2017). |
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