Isotopic mass effects for low-energy channeling in a silicon crystal

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	Isotopic mass effects for low-energy channeling in a silicon crystal
	L. P. Zheng ; Z. Y. Zhu ; Y. Li ; L. Yan ; D. Z. Zhu
刊名	Radiation Effects and Defects in Solids
	2011
卷号	166 期号:11 页码:861-865
关键词	mass effect channeling silicon crystal single-wall nanotubes carbon nanotubes charged-particles molecular-dynamics critical angles heavy-ions dependence atoms distributions radiation
ISSN号	1042-0150
中文摘要	Monte Carlo (MC) simulations have been used to study the low-energy channeling of (10)B and (11)B ions along the [100] axis in Si crystal. MC simulations show that the critical angle Psi(C) approximate to 15.3(keV/E)(1/2) (in degrees) for the channeling of isotopic (10)B ions and Psi(C) = 14.5(keV/E)(1/2) (in degrees) for the channeling of isotopic (11)B ions, where E is the incident energy. This means that (Psi(C) (for 10B ions)/Psi(C for 11B ions)) approximate to (15.3/14.5) approximate to (11/10)(1/2).
原文出处	://WOS:000296665900003
公开日期	2012-04-13
内容类型	期刊论文
源URL	[http://210.72.142.130/handle/321006/30969]
专题	金属研究所_中国科学院金属研究所
推荐引用方式 GB/T 7714	L. P. Zheng,Z. Y. Zhu,Y. Li,et al. Isotopic mass effects for low-energy channeling in a silicon crystal[J]. Radiation Effects and Defects in Solids,2011,166(11):861-865.
APA	L. P. Zheng,Z. Y. Zhu,Y. Li,L. Yan,&D. Z. Zhu.(2011).Isotopic mass effects for low-energy channeling in a silicon crystal.Radiation Effects and Defects in Solids,166(11),861-865.
MLA	L. P. Zheng,et al."Isotopic mass effects for low-energy channeling in a silicon crystal".Radiation Effects and Defects in Solids 166.11(2011):861-865.