Total ionizing dose effect of 0. 18 mu M nMOSFETs

	Total ionizing dose effect of 0. 18 mu M nMOSFETs
	Liu,ZL ; Hu,ZY ; Zhang,ZX ; Shao,H ; Ning,BX ; Bi,DW ; Chen,M ; Zou,SC
刊名	ACTA PHYSICA SINICA
	2011
卷号	60 期号:11 页码:116103
关键词	CHINESE PHYSICAL SOC
ISSN号	1000-3290
学科主题	Physics ; Multidisciplinary
语种	中文
公开日期	2012-04-10
内容类型	期刊论文
源URL	[http://ir.sim.ac.cn/handle/331004/106822]
专题	上海微系统与信息技术研究所_功能材料与器件_期刊论文
推荐引用方式 GB/T 7714	Liu,ZL,Hu,ZY,Zhang,ZX,et al. Total ionizing dose effect of 0. 18 mu M nMOSFETs[J]. ACTA PHYSICA SINICA,2011,60(11):116103.
APA	Liu,ZL.,Hu,ZY.,Zhang,ZX.,Shao,H.,Ning,BX.,...&Zou,SC.(2011).Total ionizing dose effect of 0. 18 mu M nMOSFETs.ACTA PHYSICA SINICA,60(11),116103.
MLA	Liu,ZL,et al."Total ionizing dose effect of 0. 18 mu M nMOSFETs".ACTA PHYSICA SINICA 60.11(2011):116103.