Pressure-induced topological insulating behavior in the ternary chalcogenide Ge2Sb2Te5

	Pressure-induced topological insulating behavior in the ternary chalcogenide Ge2Sb2Te5
	Sa,BS ; Zhou,J ; Song,ZT ; Sun,ZM ; Ahuja,R
刊名	PHYSICAL REVIEW B
	2011
卷号	84 期号:8 页码:85130
关键词	AMER PHYSICAL SOC
ISSN号	1098-0121
学科主题	Physics ; Condensed Matter
公开日期	2012-04-10
内容类型	期刊论文
源URL	[http://ir.sim.ac.cn/handle/331004/106740]
专题	上海微系统与信息技术研究所_功能材料与器件_期刊论文
推荐引用方式 GB/T 7714	Sa,BS,Zhou,J,Song,ZT,et al. Pressure-induced topological insulating behavior in the ternary chalcogenide Ge2Sb2Te5[J]. PHYSICAL REVIEW B,2011,84(8):85130.
APA	Sa,BS,Zhou,J,Song,ZT,Sun,ZM,&Ahuja,R.(2011).Pressure-induced topological insulating behavior in the ternary chalcogenide Ge2Sb2Te5.PHYSICAL REVIEW B,84(8),85130.
MLA	Sa,BS,et al."Pressure-induced topological insulating behavior in the ternary chalcogenide Ge2Sb2Te5".PHYSICAL REVIEW B 84.8(2011):85130.