InP/InGaAs/InP DHBT structures with graded composition base grown by gas source molecular beam epitaxy

	InP/InGaAs/InP DHBT structures with graded composition base grown by gas source molecular beam epitaxy
	Teng,T ; Ai,LK ; Xu,AH ; Sun,H ; Zhu,FY ; Qi,M
刊名	JOURNAL OF CRYSTAL GROWTH
	2011
卷号	323 期号:1 页码:525-528
关键词	ELSEVIER SCIENCE BV
ISSN号	0022-0248
学科主题	Crystallography; Materials Science ; Multidisciplinary; Physics ; Applied
公开日期	2012-04-10
内容类型	期刊论文
源URL	[http://ir.sim.ac.cn/handle/331004/106727]
专题	上海微系统与信息技术研究所_功能材料与器件_期刊论文
推荐引用方式 GB/T 7714	Teng,T,Ai,LK,Xu,AH,et al. InP/InGaAs/InP DHBT structures with graded composition base grown by gas source molecular beam epitaxy[J]. JOURNAL OF CRYSTAL GROWTH,2011,323(1):525-528.
APA	Teng,T,Ai,LK,Xu,AH,Sun,H,Zhu,FY,&Qi,M.(2011).InP/InGaAs/InP DHBT structures with graded composition base grown by gas source molecular beam epitaxy.JOURNAL OF CRYSTAL GROWTH,323(1),525-528.
MLA	Teng,T,et al."InP/InGaAs/InP DHBT structures with graded composition base grown by gas source molecular beam epitaxy".JOURNAL OF CRYSTAL GROWTH 323.1(2011):525-528.