Quantum dot lasers grown by gas source molecular-beam epitaxy

	Quantum dot lasers grown by gas source molecular-beam epitaxy
	Gong, Q ; Chen, P ; Li, SG ; Lao, YF ; Cao, CF ; Xu, CF ; Zhang, YG ; Feng, SL（封松林） ; Ma, CH ; Wang, HL
刊名	JOURNAL OF CRYSTAL GROWTH
	2011
卷号	323 期号:1 页码:450-453
关键词	ELSEVIER SCIENCE BV
ISSN号	0022-0248
学科主题	Crystallography; Materials Science, Multidisciplinary; Physics, Applied
语种	英语
公开日期	2012-04-10
内容类型	期刊论文
源URL	[http://ir.sim.ac.cn/handle/331004/106725]
专题	上海微系统与信息技术研究所_功能材料与器件_期刊论文
推荐引用方式 GB/T 7714	Gong, Q,Chen, P,Li, SG,et al. Quantum dot lasers grown by gas source molecular-beam epitaxy[J]. JOURNAL OF CRYSTAL GROWTH,2011,323(1):450-453.
APA	Gong, Q.,Chen, P.,Li, SG.,Lao, YF.,Cao, CF.,...&Wang, HL.(2011).Quantum dot lasers grown by gas source molecular-beam epitaxy.JOURNAL OF CRYSTAL GROWTH,323(1),450-453.
MLA	Gong, Q,et al."Quantum dot lasers grown by gas source molecular-beam epitaxy".JOURNAL OF CRYSTAL GROWTH 323.1(2011):450-453.