IR studies of reactive DC magnetron sputtered SiC films on silicon using effective medium theory
Lei,YM ; Yu,YH ; Cheng,LL ; Ren,CX ; Zou,SC ; Wong,SP ; Chen,DH ; Wilson,IH
刊名MATERIALS LETTERS
2000
卷号43期号:4页码:215-219
关键词CARBON GROWTH
ISSN号0167-577X
通讯作者Lei, YM, Chinese Acad Sci, Shanghai Inst Met, Ion Beam Lab, 865 Changning Rd, Shanghai 200050, Peoples R China
学科主题Materials Science ; Multidisciplinary; Physics ; Applied
收录类别SCI
公开日期2012-03-24
内容类型期刊论文
源URL[http://ir.sim.ac.cn/handle/331004/95791]  
专题上海微系统与信息技术研究所_功能材料与器件_期刊论文
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GB/T 7714
Lei,YM,Yu,YH,Cheng,LL,et al. IR studies of reactive DC magnetron sputtered SiC films on silicon using effective medium theory[J]. MATERIALS LETTERS,2000,43(4):215-219.
APA Lei,YM.,Yu,YH.,Cheng,LL.,Ren,CX.,Zou,SC.,...&Wilson,IH.(2000).IR studies of reactive DC magnetron sputtered SiC films on silicon using effective medium theory.MATERIALS LETTERS,43(4),215-219.
MLA Lei,YM,et al."IR studies of reactive DC magnetron sputtered SiC films on silicon using effective medium theory".MATERIALS LETTERS 43.4(2000):215-219.
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