Investigation of damage behaviour and isolation effect of n-type 6H-SiC by implantation of oxygen

	Investigation of damage behaviour and isolation effect of n-type 6H-SiC by implantation of oxygen
	Wang, LW ; Huang, JP ; Duo, XZ ; Song, ZT ; Lin, CL ; Zetterling, CM ; Ostling, M
刊名	JOURNAL OF PHYSICS D-APPLIED PHYSICS
	2000
卷号	33 期号:12 页码:1551-1555
关键词	ENHANCED THERMAL-OXIDATION ION-IMPLANTATION SILICON-CARBIDE AMORPHIZATION LAYERS
ISSN号	0022-3727
通讯作者	Wang, LW, Chinese Acad Sci, Shanghai Inst Met, State Key Lab Funct Mat Informat, Shanghai 200050, Peoples R China
学科主题	Physics, Applied
收录类别	SCI
语种	英语
公开日期	2012-03-24
内容类型	期刊论文
源URL	[http://ir.sim.ac.cn/handle/331004/95765]
专题	上海微系统与信息技术研究所_功能材料与器件_期刊论文
推荐引用方式 GB/T 7714	Wang, LW,Huang, JP,Duo, XZ,et al. Investigation of damage behaviour and isolation effect of n-type 6H-SiC by implantation of oxygen[J]. JOURNAL OF PHYSICS D-APPLIED PHYSICS,2000,33(12):1551-1555.
APA	Wang, LW.,Huang, JP.,Duo, XZ.,Song, ZT.,Lin, CL.,...&Ostling, M.(2000).Investigation of damage behaviour and isolation effect of n-type 6H-SiC by implantation of oxygen.JOURNAL OF PHYSICS D-APPLIED PHYSICS,33(12),1551-1555.
MLA	Wang, LW,et al."Investigation of damage behaviour and isolation effect of n-type 6H-SiC by implantation of oxygen".JOURNAL OF PHYSICS D-APPLIED PHYSICS 33.12(2000):1551-1555.