Preparation of AlN films by ion-beam-enhanced deposition

	Preparation of AlN films by ion-beam-enhanced deposition
	Men, CL ; Xu, Z ; Zheng, ZH ; Duo, XZ ; Zhang, M ; Lin, CL
刊名	CHINESE PHYSICS LETTERS
	2001
卷号	18 期号:9 页码:1282-1284
关键词	CHEMICAL-VAPOR-DEPOSITION NITRIDE FILMS TEMPERATURE ALUMINUM
ISSN号	0256-307X
通讯作者	Men, CL, Tongji Univ, Sch Mat Sci & Engn, Inst Microelect Mat, Shanghai 200092, Peoples R China
学科主题	Physics, Multidisciplinary
收录类别	SCI
语种	英语
公开日期	2012-03-24
内容类型	期刊论文
源URL	[http://ir.sim.ac.cn/handle/331004/95752]
专题	上海微系统与信息技术研究所_功能材料与器件_期刊论文
推荐引用方式 GB/T 7714	Men, CL,Xu, Z,Zheng, ZH,et al. Preparation of AlN films by ion-beam-enhanced deposition[J]. CHINESE PHYSICS LETTERS,2001,18(9):1282-1284.
APA	Men, CL,Xu, Z,Zheng, ZH,Duo, XZ,Zhang, M,&Lin, CL.(2001).Preparation of AlN films by ion-beam-enhanced deposition.CHINESE PHYSICS LETTERS,18(9),1282-1284.
MLA	Men, CL,et al."Preparation of AlN films by ion-beam-enhanced deposition".CHINESE PHYSICS LETTERS 18.9(2001):1282-1284.