Damage in hydrogen plasma implanted silicon

	Damage in hydrogen plasma implanted silicon
	Wang, LW ; Fu, RKY ; Zeng, X ; Chu, PK ; Cheung, WY ; Wong, SP
刊名	JOURNAL OF APPLIED PHYSICS
	2001
卷号	90 期号:4 页码:1735-1739
关键词	IMMERSION ION-IMPLANTATION
ISSN号	0021-8979
通讯作者	Chu, PK, City Univ Hong Kong, Dept Phys & Mat Sci, Tat Chee Ave, Kowlong, Hong Kong, Peoples R China
学科主题	Physics, Applied
收录类别	SCI
语种	英语
公开日期	2012-03-24
内容类型	期刊论文
源URL	[http://ir.sim.ac.cn/handle/331004/95704]
专题	上海微系统与信息技术研究所_功能材料与器件_期刊论文
推荐引用方式 GB/T 7714	Wang, LW,Fu, RKY,Zeng, X,et al. Damage in hydrogen plasma implanted silicon[J]. JOURNAL OF APPLIED PHYSICS,2001,90(4):1735-1739.
APA	Wang, LW,Fu, RKY,Zeng, X,Chu, PK,Cheung, WY,&Wong, SP.(2001).Damage in hydrogen plasma implanted silicon.JOURNAL OF APPLIED PHYSICS,90(4),1735-1739.
MLA	Wang, LW,et al."Damage in hydrogen plasma implanted silicon".JOURNAL OF APPLIED PHYSICS 90.4(2001):1735-1739.