Formation of silicon on insulator using separation by implantation of oxygen with water plasma
Chen, J ; Wang, X ; Chen, M ; Zheng, ZH ; Yu, YH
刊名APPLIED PHYSICS LETTERS
2001
卷号78期号:1页码:73-75
关键词BURIED OXIDE SIMOX TECHNOLOGY
ISSN号0003-6951
通讯作者Chen, J, Chinese Acad Sci, Shanghai Inst Met, Ion Beam Lab, 865 Changning Rd, Shanghai 200050, Peoples R China
学科主题Physics, Applied
收录类别SCI
语种英语
公开日期2012-03-24
内容类型期刊论文
源URL[http://ir.sim.ac.cn/handle/331004/95679]  
专题上海微系统与信息技术研究所_功能材料与器件_期刊论文
推荐引用方式
GB/T 7714
Chen, J,Wang, X,Chen, M,et al. Formation of silicon on insulator using separation by implantation of oxygen with water plasma[J]. APPLIED PHYSICS LETTERS,2001,78(1):73-75.
APA Chen, J,Wang, X,Chen, M,Zheng, ZH,&Yu, YH.(2001).Formation of silicon on insulator using separation by implantation of oxygen with water plasma.APPLIED PHYSICS LETTERS,78(1),73-75.
MLA Chen, J,et al."Formation of silicon on insulator using separation by implantation of oxygen with water plasma".APPLIED PHYSICS LETTERS 78.1(2001):73-75.
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