Formation of silicon on insulator using separation by implantation of oxygen with water plasma | |
Chen, J ; Wang, X ; Chen, M ; Zheng, ZH ; Yu, YH | |
刊名 | APPLIED PHYSICS LETTERS
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2001 | |
卷号 | 78期号:1页码:73-75 |
关键词 | BURIED OXIDE SIMOX TECHNOLOGY |
ISSN号 | 0003-6951 |
通讯作者 | Chen, J, Chinese Acad Sci, Shanghai Inst Met, Ion Beam Lab, 865 Changning Rd, Shanghai 200050, Peoples R China |
学科主题 | Physics, Applied |
收录类别 | SCI |
语种 | 英语 |
公开日期 | 2012-03-24 |
内容类型 | 期刊论文 |
源URL | [http://ir.sim.ac.cn/handle/331004/95679] ![]() |
专题 | 上海微系统与信息技术研究所_功能材料与器件_期刊论文 |
推荐引用方式 GB/T 7714 | Chen, J,Wang, X,Chen, M,et al. Formation of silicon on insulator using separation by implantation of oxygen with water plasma[J]. APPLIED PHYSICS LETTERS,2001,78(1):73-75. |
APA | Chen, J,Wang, X,Chen, M,Zheng, ZH,&Yu, YH.(2001).Formation of silicon on insulator using separation by implantation of oxygen with water plasma.APPLIED PHYSICS LETTERS,78(1),73-75. |
MLA | Chen, J,et al."Formation of silicon on insulator using separation by implantation of oxygen with water plasma".APPLIED PHYSICS LETTERS 78.1(2001):73-75. |
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