Fabrication of device-grade separation-by-implantation-of-oxygen materials by optimizing dose-energy match

	Fabrication of device-grade separation-by-implantation-of-oxygen materials by optimizing dose-energy match
	Chen,M ; Yu,YH ; Wang,X ; Wang,X ; Chen,J ; Liu,XH ; Dong,YM
刊名	JOURNAL OF MATERIALS RESEARCH
	2002
卷号	17 期号:7 页码:1634-1643
关键词	BURIED OXIDE ION-IMPLANTATION SIMOX SILICON LAYERS TEMPERATURE WAFERS
ISSN号	0884-2914
通讯作者	Chen, M, Chinese Acad Sci, Shanghai Inst Met, Ion Beam Lab, Shanghai 200050, Peoples R China
学科主题	Materials Science ; Multidisciplinary
收录类别	SCI
公开日期	2012-03-24
内容类型	期刊论文
源URL	[http://ir.sim.ac.cn/handle/331004/95572]
专题	上海微系统与信息技术研究所_功能材料与器件_期刊论文
推荐引用方式 GB/T 7714	Chen,M,Yu,YH,Wang,X,et al. Fabrication of device-grade separation-by-implantation-of-oxygen materials by optimizing dose-energy match[J]. JOURNAL OF MATERIALS RESEARCH,2002,17(7):1634-1643.
APA	Chen,M.,Yu,YH.,Wang,X.,Wang,X.,Chen,J.,...&Dong,YM.(2002).Fabrication of device-grade separation-by-implantation-of-oxygen materials by optimizing dose-energy match.JOURNAL OF MATERIALS RESEARCH,17(7),1634-1643.
MLA	Chen,M,et al."Fabrication of device-grade separation-by-implantation-of-oxygen materials by optimizing dose-energy match".JOURNAL OF MATERIALS RESEARCH 17.7(2002):1634-1643.