Oxygen profile engineering in silicon by germanium addition and high-temperature annealing

	Oxygen profile engineering in silicon by germanium addition and high-temperature annealing
	An, ZH ; Chu, PK ; Zhang, M ; Men, CL ; Lin, CL
刊名	APPLIED PHYSICS LETTERS
	2003
卷号	83 期号:2 页码:305-307
关键词	ION-IMPLANTATION SI/SIO2 SUPERLATTICE SI
ISSN号	0003-6951
通讯作者	Chu, PK, City Univ Hong Kong, Dept Phys & Mat Sci, Tat Chee Ave, Kowloon, Hong Kong, Peoples R China
学科主题	Physics, Applied
收录类别	SCI
语种	英语
公开日期	2012-03-24
内容类型	期刊论文
源URL	[http://ir.sim.ac.cn/handle/331004/95548]
专题	上海微系统与信息技术研究所_功能材料与器件_期刊论文
推荐引用方式 GB/T 7714	An, ZH,Chu, PK,Zhang, M,et al. Oxygen profile engineering in silicon by germanium addition and high-temperature annealing[J]. APPLIED PHYSICS LETTERS,2003,83(2):305-307.
APA	An, ZH,Chu, PK,Zhang, M,Men, CL,&Lin, CL.(2003).Oxygen profile engineering in silicon by germanium addition and high-temperature annealing.APPLIED PHYSICS LETTERS,83(2),305-307.
MLA	An, ZH,et al."Oxygen profile engineering in silicon by germanium addition and high-temperature annealing".APPLIED PHYSICS LETTERS 83.2(2003):305-307.