Study of HfO2 thin films prepared by electron beam evaporation

	Study of HfO2 thin films prepared by electron beam evaporation
	Wang,YJ ; Lin,ZL ; Cheng,XL ; Xiao,HB ; Zhang,F ; Zou,SC
刊名	APPLIED SURFACE SCIENCE
	2004
卷号	228 期号:1-4 页码:93-99
关键词	ION-ASSISTED DEPOSITION THERMAL-STABILITY SILICON
ISSN号	0169-4332
通讯作者	Wang, YJ, Chinese Acad Sci, Shanghai Inst Microsyst & Informat Technol, Ion Beam Lab, 865 Changning Rd, Shanghai 200050, Peoples R China
学科主题	Chemistry ; Physical; Materials Science ; Coatings & Films; Physics ; Applied; Physics ; Condensed Matter
收录类别	SCI
公开日期	2012-03-24
内容类型	期刊论文
源URL	[http://ir.sim.ac.cn/handle/331004/95405]
专题	上海微系统与信息技术研究所_功能材料与器件_期刊论文
推荐引用方式 GB/T 7714	Wang,YJ,Lin,ZL,Cheng,XL,et al. Study of HfO2 thin films prepared by electron beam evaporation[J]. APPLIED SURFACE SCIENCE,2004,228(1-4):93-99.
APA	Wang,YJ,Lin,ZL,Cheng,XL,Xiao,HB,Zhang,F,&Zou,SC.(2004).Study of HfO2 thin films prepared by electron beam evaporation.APPLIED SURFACE SCIENCE,228(1-4),93-99.
MLA	Wang,YJ,et al."Study of HfO2 thin films prepared by electron beam evaporation".APPLIED SURFACE SCIENCE 228.1-4(2004):93-99.