Effect of annealing temperature on the microstructure and resistivity of Ge2Sb2Te5 films

	Effect of annealing temperature on the microstructure and resistivity of Ge2Sb2Te5 films
	Liu, B ; Song, ZT ; Feng, SL ; Chen, B
刊名	CHINESE PHYSICS LETTERS
	2004
卷号	21 期号:6 页码:1143-1146
关键词	REVERSIBLE PHASE-TRANSITION AMORPHOUS THIN-FILMS ELECTRICAL-PROPERTIES TELLURIDE GLASSES MEMORY CRYSTALLIZATION SEMICONDUCTORS GE20TE80-XBIX
ISSN号	0256-307X
通讯作者	Liu, B, Chinese Acad Sci, Shanghai Inst Microsyst & Informat Technol, Res Ctr Funct Semicond Film Engn & Technol, State Key Lab Funct Mat Informat, Shanghai 200050, Peoples R China
学科主题	Physics, Multidisciplinary
收录类别	SCI
语种	英语
公开日期	2012-03-24
内容类型	期刊论文
源URL	[http://ir.sim.ac.cn/handle/331004/95370]
专题	上海微系统与信息技术研究所_功能材料与器件_期刊论文
推荐引用方式 GB/T 7714	Liu, B,Song, ZT,Feng, SL,et al. Effect of annealing temperature on the microstructure and resistivity of Ge2Sb2Te5 films[J]. CHINESE PHYSICS LETTERS,2004,21(6):1143-1146.
APA	Liu, B,Song, ZT,Feng, SL,&Chen, B.(2004).Effect of annealing temperature on the microstructure and resistivity of Ge2Sb2Te5 films.CHINESE PHYSICS LETTERS,21(6),1143-1146.
MLA	Liu, B,et al."Effect of annealing temperature on the microstructure and resistivity of Ge2Sb2Te5 films".CHINESE PHYSICS LETTERS 21.6(2004):1143-1146.