Thermal stability of diamondlike carbon buried layer fabricated by plasma immersion ion implantation and deposition in silicon on insulator

	Thermal stability of diamondlike carbon buried layer fabricated by plasma immersion ion implantation and deposition in silicon on insulator
	Di, ZF ; Huang, AP ; Fu, RKY ; Chu, PK ; Shao, L ; Hochbauer, T ; Nastasi, M ; Zhang, M ; Liu, WL ; Shen, QW ; Luo, ST ; Song, ZT ; Lin, CG
刊名	JOURNAL OF APPLIED PHYSICS
	2005
卷号	98 期号:5 页码:53502-53502
关键词	DLC FILMS SPECTROSCOPY
ISSN号	0021-8979
通讯作者	Chu, PK, CUNY, Dept Phys & Mat Sci, Tat Chee Ave, Kowloon, Hong Kong, Peoples R China
学科主题	Physics, Applied
收录类别	SCI
语种	英语
公开日期	2012-03-24
内容类型	期刊论文
源URL	[http://ir.sim.ac.cn/handle/331004/95348]
专题	上海微系统与信息技术研究所_功能材料与器件_期刊论文
推荐引用方式 GB/T 7714	Di, ZF,Huang, AP,Fu, RKY,et al. Thermal stability of diamondlike carbon buried layer fabricated by plasma immersion ion implantation and deposition in silicon on insulator[J]. JOURNAL OF APPLIED PHYSICS,2005,98(5):53502-53502.
APA	Di, ZF.,Huang, AP.,Fu, RKY.,Chu, PK.,Shao, L.,...&Lin, CG.(2005).Thermal stability of diamondlike carbon buried layer fabricated by plasma immersion ion implantation and deposition in silicon on insulator.JOURNAL OF APPLIED PHYSICS,98(5),53502-53502.
MLA	Di, ZF,et al."Thermal stability of diamondlike carbon buried layer fabricated by plasma immersion ion implantation and deposition in silicon on insulator".JOURNAL OF APPLIED PHYSICS 98.5(2005):53502-53502.