Interfacial characteristics of fully depleted SiGe-on-insulator (SGOI) substrate fabricated by modified Ge condensation

	Interfacial characteristics of fully depleted SiGe-on-insulator (SGOI) substrate fabricated by modified Ge condensation
	Di, ZF ; Zhang, M ; Liu, WL ; Luo, SH ; Song, ZT ; Lin, CL ; Lin, Q ; Chu, PK
刊名	SEMICONDUCTOR SCIENCE AND TECHNOLOGY
	2005
卷号	20 期号:8 页码:L31-L35
关键词	ELECTRON-MOBILITY ENHANCEMENT STRAINED-SI DIFFUSION OXIDATION GERMANIUM SILICON ALLOYS
ISSN号	0268-1242
通讯作者	Di, ZF, Chinese Acad Sci, SIMIT, Res Ctr Semicond Funct Film Engn Technol, Shanghai 200050, Peoples R China
学科主题	Engineering, Electrical & Electronic; Materials Science, Multidisciplinary; Physics, Condensed Matter
收录类别	SCI
语种	英语
公开日期	2012-03-24
内容类型	期刊论文
源URL	[http://ir.sim.ac.cn/handle/331004/95346]
专题	上海微系统与信息技术研究所_功能材料与器件_期刊论文
推荐引用方式 GB/T 7714	Di, ZF,Zhang, M,Liu, WL,et al. Interfacial characteristics of fully depleted SiGe-on-insulator (SGOI) substrate fabricated by modified Ge condensation[J]. SEMICONDUCTOR SCIENCE AND TECHNOLOGY,2005,20(8):L31-L35.
APA	Di, ZF.,Zhang, M.,Liu, WL.,Luo, SH.,Song, ZT.,...&Chu, PK.(2005).Interfacial characteristics of fully depleted SiGe-on-insulator (SGOI) substrate fabricated by modified Ge condensation.SEMICONDUCTOR SCIENCE AND TECHNOLOGY,20(8),L31-L35.
MLA	Di, ZF,et al."Interfacial characteristics of fully depleted SiGe-on-insulator (SGOI) substrate fabricated by modified Ge condensation".SEMICONDUCTOR SCIENCE AND TECHNOLOGY 20.8(2005):L31-L35.