Hydrogen annealing effects on epitaxy of SOI wafer

	Hydrogen annealing effects on epitaxy of SOI wafer
	Cheng,XL ; Lin,ZL ; Wang,YJ ; Xiao,HB ; Feng,Z ; Zou,SC
刊名	MATERIALS LETTERS
	2005
卷号	59 期号:2-3 页码:361-365
关键词	SILICON-ON-INSULATOR SIMOX
ISSN号	0167-577X
通讯作者	Cheng, XL, Chinese Acad Sci, Shanghai Inst Microsyst & Informat Technol, Ion Beam Lab, 868 Changning Rd, Shanghai 200050, Peoples R China
学科主题	Materials Science ; Multidisciplinary; Physics ; Applied
收录类别	SCI
公开日期	2012-03-24
内容类型	期刊论文
源URL	[http://ir.sim.ac.cn/handle/331004/95283]
专题	上海微系统与信息技术研究所_功能材料与器件_期刊论文
推荐引用方式 GB/T 7714	Cheng,XL,Lin,ZL,Wang,YJ,et al. Hydrogen annealing effects on epitaxy of SOI wafer[J]. MATERIALS LETTERS,2005,59(2-3):361-365.
APA	Cheng,XL,Lin,ZL,Wang,YJ,Xiao,HB,Feng,Z,&Zou,SC.(2005).Hydrogen annealing effects on epitaxy of SOI wafer.MATERIALS LETTERS,59(2-3),361-365.
MLA	Cheng,XL,et al."Hydrogen annealing effects on epitaxy of SOI wafer".MATERIALS LETTERS 59.2-3(2005):361-365.